Summary

• Description:

  The MS Word document comprises Grade 10 CBC Electricity Term 3 2026 Scheme of Work designed for senior school technical educators implementing the Competency-Based Curriculum (CBC) under the Kenya Institute of Curriculum Development (KICD) 2025 Framework. This comprehensive instructional document serves as an essential teaching and lesson planning guide for senior school educators, helping them structure learning sequences, monitor curriculum coverage, track practical workshop activities, and evaluate learner progress throughout the third academic term.

  Focusing on Strand 4.0, "Electronics," the scheme covers a rich, progressive pathway spanning semiconductor theory, diode technology, transistor operations, composite electronics integration, software-based circuit simulation, safety, and project fabrication. Learners move systematically from understanding atomic structure, covalent bonding, and P-type/N-type doping to constructing and testing half-wave/full-wave rectifiers, Zener diode voltage regulators, BJT switching and amplification circuits, and field-effect transistor (FET) configurations. The curriculum combines hands-on breadboard assembly, multimeter/oscilloscope signal tracking, and digital circuit simulation software with practical fault diagnosis, e-waste management, and real-world project fabrication, ensuring a well-rounded balance of theoretical understanding and practical technical expertise.

  Key Scheme Details

  • Education Level: Grade 10 (Senior School)
  • Subject: Electricity
  • Term: Term 3
  • Year: 2026
  • Curriculum: KICD Competency-Based Curriculum (CBC) 2025 Framework
  • Number of Weeks Covered: 9 Calendar Weeks
  • Number of Teaching Weeks: 8 Weeks
  • Number of Lessons per Week: 4 Lessons
  • Total Number of Lessons: 32 Lessons
  • Half-Term/Mid-Term Break: Week 7 (7 October 2026 – 11 October 2026)
  • Examination/Assessment Period: Week 9
  • Strand Covered: Electronics
  • Sub-Strands Covered: Semiconductor Theory, Semiconductor Diodes, Transistors, Composite Electronics Integration, Electronic Circuit Simulation, Electronics Safety and Waste Management, Practical Consolidation & Review, Practical Project Fabrication, Project Testing & Evaluation, Electronics Career Opportunities, Strand Review and End of Term Assessment
  • Assessment Methods: Oral questions, written tests, group discussion observation, practical evaluations, diagram labeling, graph plotting assessment, fault-tracing tasks, design rubrics, portfolio entries, peer assessment, project rating scales, workstation checklists
  • Learning Resources: Grade 10 Electricity Curriculum Design, digital devices, periodic table charts, semiconductor samples, modeling clay/beads/wire, simulation software, DC power supplies, multimeters, oscilloscopes, diodes (1N4007, Zener, LEDs, Power, Infrared), BJTs (BC547, BD139), FETs (IRF540, 2N7000), breadboards, resistors, LDRs, thermistors, relays, DC motors, fault diagnosis worksheets, e-waste disposal bins, examination papers

  Weekly Coverage

  • Week 1: Semiconductor Theory & PN Junction Formation — Atomic structure of silicon and germanium, intrinsic vs. extrinsic materials, doping processes (P-type and N-type), 3D covalent bond modeling, and PN junction formation including depletion layer and barrier potential mechanisms.
  • Week 2: Semiconductor Applications, Diode Operation & I-V Curves — Pros and cons of semiconductor advances, semiconductor diode operating principles (forward/reverse biasing), measuring current-voltage (I-V) characteristics, knee voltage, breakdown voltage, and breadboard assembly of half-wave/full-wave rectifier circuits.
  • Week 3: Diode Troubleshooting, Diode Types & Parameter Selection — Multimeter fault tracing in diode networks (open/short circuits), applications of LEDs, Zener regulators, power diodes, and IR sensors, designing commercial diode solutions, and analyzing datasheet parameters (PIV and current ratings).
  • Week 4: Bipolar Junction Transistors (BJT) & Field Effect Transistors (FET) — BJT construction and operating principles (NPN vs. PNP), voltage-controlled FET/JFET/MOSFET operations, measuring BJT common-emitter parameters, and plotting DC output characteristic curves (cutoff, active, saturation, and current gain beta calculations).
  • Week 5: Transistor Selection, Switching Circuits & Troubleshooting — Evaluating transistor datasheets, constructing sensor-based transistor switching circuits (LDRs/thermistors), examining amplification stages on commercial PCBs, and tracing junction/biasing faults using multimeter test procedures.
  • Week 6: Composite Electronics, Software Simulation & E-Waste Safety — Integrating sensors, protective flyback diodes, and transistor switches into composite circuits, performing signal tracking with oscilloscopes, simulating circuits using software, and establishing laboratory e-waste segregation and safety rules.
  • Week 7: Mid-Term Break — Scheduled mid-term break from 7 October 2026 to 11 October 2026.
  • Week 8: Practical Fabrication, Project Testing & Career Paths — Analytical review calculations, fabricating functional mini-projects (light-controlled switches, water level indicators), testing operational performance against design expectations, and exploring career pathways in electronics engineering.
  • Week 9: Strand Review, Terminal Assessment & Workstation Audit — Comprehensive review across Strand 4.0, sitting for the End-of-Term Written Electricity Examination, reviewing marked scripts, and organizing and auditing workshop workstations.

  Strands and Sub-Strands Covered

  • Strand 4.0: Electronics
    • Sub-Strand 4.1: Semiconductor Theory
      • Atomic structures, energy bands, and electrical conductivity of silicon and germanium
      • Intrinsic semiconductors, thermal excitation, and charge carriers (electrons and holes)
      • Extrinsic doping mechanisms: trivalent acceptors (P-type) and pentavalent donors (N-type)
      • 3D physical modeling of covalent crystal lattice structures
      • PN junction dynamics: electron-hole recombination, depletion zone width, and barrier potential
    • Sub-Strand 4.2: Semiconductor Diodes
      • Forward and reverse bias conduction mechanisms across PN junctions
      • Experimental plotting of I-V characteristic curves, knee voltage, and reverse breakdown
      • Rectification circuits: half-wave, full-wave center-tapped, and bridge rectifiers
      • Multimeter continuity checks, forward resistance testing, and diode fault isolation
      • Special-purpose diodes: Zener voltage regulation, LEDs, power diodes, and infrared sensors
      • Datasheet analysis: Peak Inverse Voltage (PIV), forward current ($I_F$), and power dissipation
    • Sub-Strand 4.3: Transistors
      • Bipolar Junction Transistor (BJT) structure: Emitter, Base, Collector layers in NPN/PNP types
      • Field Effect Transistor (FET/JFET/MOSFET) voltage-controlled gate mechanisms
      • Common-emitter DC measurements: Base current ($I_B$), Collector current ($I_C$), Base-Emitter voltage ($V_{BE}$), Collector-Emitter voltage ($V_{CE}$)
      • Output characteristic curves: cutoff, active, saturation regions, and current gain ($\beta$)
      • Sensor-driven transistor switching circuits utilizing LDRs and thermistors
      • Signal amplification stages on printed circuit boards (PCBs) and junction fault diagnosis

  The scheme covers the following key topics and learning areas:

  • Solid-State Physics and Semiconductor Material Science
    • Valence shell electrons, covalent lattice bonding, donor/acceptor impurities, and doping ratios
    • Thermal generation of electron-hole pairs, majority vs. minority carriers, and barrier potential voltages
    • Environmental impacts and safe handling of semiconductor electronic waste
  • Diode Engineering and Circuit Rectification
    • Conduction characteristics during forward bias vs. depletion layer expansion during reverse bias
    • AC to DC power rectification, smoothing, indicator LEDs, and Zener voltage stabilization
    • Troubleshooting open-circuit and short-circuit diode failures on printed circuit assemblies
  • Transistor Applications, Circuit Integration, and Simulation
    • Current-controlled BJT operation vs. voltage-controlled FET operation
    • Transistor biasing, load line analysis, current gain ($\beta = \frac{I_C}{I_B}$), and switching thresholds
    • Flyback protection diode integration, sensor-driven relay drivers, and CAD software circuit simulation

  Learning Outcomes and Competencies

  Learners completing this scheme of work develop essential technical competencies, analytical reasoning, and practical engineering skills. The curriculum builds critical thinking through datasheet parameter evaluation, mathematical competence through current gain and limiting resistor calculations, and spatial awareness through schematic interpretation and breadboard circuit assembly. Practical exercises foster troubleshooting dexterity using multimeters and oscilloscopes, creative problem-solving through mini-project fabrication, digital literacy via circuit simulation software, and environmental stewardship through structured e-waste disposal and workstation safety management.

  Learning Experiences and Practical Activities

  Learning experiences are centered on active, hands-on engagement. Practical activities include constructing 3D covalent bond lattice models using clay and beads, setting up variable DC power supplies to plot diode I-V curves, assembling half-wave and full-wave bridge rectifiers on breadboards, and testing Zener diode voltage regulators. Learners perform multimeter continuity and junction checks to locate faulty components, assemble sensor-driven transistor switching circuits incorporating LDRs and relays, simulate circuits using CAD software, fabricate practical mini-project prototypes, and participate in e-waste segregation and workstation cleanup.

  Assessment Methods

  • Formative and Workshop Assessment: Continuous oral questioning, group discussion observation, schematic diagram labeling, peer review of physical models, and safety compliance checklists.
  • Practical and Project Assessment: Practical fault-tracing task evaluations, graph plotting assessments, breadboard circuit functionality testing, project prototype rating scales, simulation report rubrics, and portfolio checks.
  • Summative Assessment: Calculation problem sets, written sub-strand quizzes, a formal End-of-Term Written Electricity Examination in Week 9, and script correction reviews.

  Learning Resources

  • Textual and Instructional Materials: Grade 10 Electricity Curriculum Design (KICD 2025), periodic table charts, semiconductor datasheets, fault diagnosis worksheets, technical magazines, and examination test papers.
  • Laboratory Equipment and Instruments: Variable DC power supplies, digital multimeters, oscilloscopes, circuit simulation software, breadboards, stripboards, hand tools, and e-waste disposal bins.
  • Electronic Components: Assorted diodes (1N4007, Zener, LEDs, Power, Infrared), BJTs (BC547, BD139), FETs (IRF540, 2N7000), resistors, LDRs, thermistors, relays, small DC motors, and connecting wires.
• Category:

  Schemes of Work
• Level:

  Grade 10
• Subject:

  ELECTRICAL TECHNOLOGY
• Posted By:

  Caleb_Peter

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